Analysis of the diffusion layer thickness, equivalent circuit and conductance behaviour for reversible electron transfer processes in linear sweep voltammetry - IIT Madras

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The parametric dependence of the diffusion layer thickness upon electrode potential and scan rate has been derived for reversible electron transfer processes in linear sweep voltammetry (LSV) using a simple analytical expression for the dimensionless current function. The quantitative variation of t

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Analysis of the diffusion layer thickness, equivalent circuit and conductance behaviour for reversible electron transfer processes in linear sweep voltammetry - IIT Madras

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Analysis of the diffusion layer thickness, equivalent circuit and conductance behaviour for reversible electron transfer processes in linear sweep voltammetry - IIT Madras

Analysis of the diffusion layer thickness, equivalent circuit and conductance behaviour for reversible electron transfer processes in linear sweep voltammetry - IIT Madras

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Model schematic showing the diffusion layer, diffuse layer, and compact