Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
Characteristics of the RRAM performance of TiON films prepared via (a)
Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect
On Practical Charge Injection at the Metal/Organic Semiconductor Interface
Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor
The O 1s spectra of Al2O3. XPS O 1s peak in Al2O3 made with (a) 0.01
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A
On Practical Charge Injection at the Metal/Organic Semiconductor Interface
Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC
Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect
Schematic diagrams of the resistive switching mechanisms for TiON films
Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure